Evaluation of InGaN/GaN light-emitting diodes of circular geometry.
Identifieur interne : 001F00 ( Main/Exploration ); précédent : 001E99; suivant : 001F01Evaluation of InGaN/GaN light-emitting diodes of circular geometry.
Auteurs : RBID : pubmed:20052154English descriptors
- KwdEn :
- MESH :
- chemical , chemistry : Gallium, Indium.
- instrumentation : Lighting.
- Computer Simulation, Computer-Aided Design, Equipment Design, Equipment Failure Analysis, Models, Chemical, Semiconductors.
Abstract
Blue GaN light emitting diodes (LEDs) in the shape of cuboids and circular disks have been fabricated by laser micromachining. The proposed circular geometry serves to enhance overall light extraction on a macro-scale and to improve uniformity of the emission pattern due to the rotational symmetry of the chip. Analysis of the chip shaping effect is carried out by ray-tracing simulations and further supported with mathematical modeling using ideal LED models, and subsequently verified with fabricated devices. In comparison, a 10% improvement in overall emission was observed for circular LEDs over the regular cuboids, consistent with simulations and calculations. The measured emission pattern from the circular LED confirms the axial symmetry of the emission beam.
PubMed: 20052154
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en">Evaluation of InGaN/GaN light-emitting diodes of circular geometry.</title><author><name sortKey="Wang, X H" uniqKey="Wang X">X H Wang</name><affiliation wicri:level="1"><nlm:affiliation>Semiconductor Display and Lighting Laboratory, Department of Electrical and Electronic Engineering The University of Hong Kong, Pokfulam Road, Hong Kong.</nlm:affiliation><country xml:lang="fr">Hong Kong</country><wicri:regionArea>Semiconductor Display and Lighting Laboratory, Department of Electrical and Electronic Engineering The University of Hong Kong, Pokfulam Road</wicri:regionArea></affiliation></author><author><name sortKey="Fu, W Y" uniqKey="Fu W">W Y Fu</name></author><author><name sortKey="Lai, P T" uniqKey="Lai P">P T Lai</name></author><author><name sortKey="Choi, H W" uniqKey="Choi H">H W Choi</name></author></titleStmt><publicationStmt><date when="2009">2009</date><idno type="RBID">pubmed:20052154</idno><idno type="pmid">20052154</idno><idno type="wicri:Area/Main/Corpus">001B36</idno><idno type="wicri:Area/Main/Curation">001B36</idno><idno type="wicri:Area/Main/Exploration">001F00</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Computer Simulation</term><term>Computer-Aided Design</term><term>Equipment Design</term><term>Equipment Failure Analysis</term><term>Gallium (chemistry)</term><term>Indium (chemistry)</term><term>Lighting (instrumentation)</term><term>Models, Chemical</term><term>Semiconductors</term></keywords><keywords scheme="MESH" type="chemical" qualifier="chemistry" xml:lang="en"><term>Gallium</term><term>Indium</term></keywords><keywords scheme="MESH" qualifier="instrumentation" xml:lang="en"><term>Lighting</term></keywords><keywords scheme="MESH" xml:lang="en"><term>Computer Simulation</term><term>Computer-Aided Design</term><term>Equipment Design</term><term>Equipment Failure Analysis</term><term>Models, Chemical</term><term>Semiconductors</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Blue GaN light emitting diodes (LEDs) in the shape of cuboids and circular disks have been fabricated by laser micromachining. The proposed circular geometry serves to enhance overall light extraction on a macro-scale and to improve uniformity of the emission pattern due to the rotational symmetry of the chip. Analysis of the chip shaping effect is carried out by ray-tracing simulations and further supported with mathematical modeling using ideal LED models, and subsequently verified with fabricated devices. In comparison, a 10% improvement in overall emission was observed for circular LEDs over the regular cuboids, consistent with simulations and calculations. The measured emission pattern from the circular LED confirms the axial symmetry of the emission beam.</div></front></TEI><pubmed><MedlineCitation Owner="NLM" Status="MEDLINE"><PMID Version="1">20052154</PMID><DateCreated><Year>2010</Year><Month>01</Month><Day>06</Day></DateCreated><DateCompleted><Year>2010</Year><Month>03</Month><Day>17</Day></DateCompleted><DateRevised><Year>2013</Year><Month>11</Month><Day>21</Day></DateRevised><Article PubModel="Print"><Journal><ISSN IssnType="Electronic">1094-4087</ISSN><JournalIssue CitedMedium="Internet"><Volume>17</Volume><Issue>25</Issue><PubDate><Year>2009</Year><Month>Dec</Month><Day>7</Day></PubDate></JournalIssue><Title>Optics express</Title><ISOAbbreviation>Opt Express</ISOAbbreviation></Journal><ArticleTitle>Evaluation of InGaN/GaN light-emitting diodes of circular geometry.</ArticleTitle><Pagination><MedlinePgn>22311-9</MedlinePgn></Pagination><ELocationID EIdType="doi" ValidYN="Y">10.1364/OE.17.022311</ELocationID><Abstract><AbstractText>Blue GaN light emitting diodes (LEDs) in the shape of cuboids and circular disks have been fabricated by laser micromachining. The proposed circular geometry serves to enhance overall light extraction on a macro-scale and to improve uniformity of the emission pattern due to the rotational symmetry of the chip. Analysis of the chip shaping effect is carried out by ray-tracing simulations and further supported with mathematical modeling using ideal LED models, and subsequently verified with fabricated devices. In comparison, a 10% improvement in overall emission was observed for circular LEDs over the regular cuboids, consistent with simulations and calculations. The measured emission pattern from the circular LED confirms the axial symmetry of the emission beam.</AbstractText></Abstract><AuthorList CompleteYN="Y"><Author ValidYN="Y"><LastName>Wang</LastName><ForeName>X H</ForeName><Initials>XH</Initials><Affiliation>Semiconductor Display and Lighting Laboratory, Department of Electrical and Electronic Engineering The University of Hong Kong, Pokfulam Road, Hong Kong.</Affiliation></Author><Author ValidYN="Y"><LastName>Fu</LastName><ForeName>W Y</ForeName><Initials>WY</Initials></Author><Author ValidYN="Y"><LastName>Lai</LastName><ForeName>P T</ForeName><Initials>PT</Initials></Author><Author ValidYN="Y"><LastName>Choi</LastName><ForeName>H W</ForeName><Initials>HW</Initials></Author></AuthorList><Language>eng</Language><PublicationTypeList><PublicationType>Evaluation Studies</PublicationType><PublicationType>Journal Article</PublicationType></PublicationTypeList></Article><MedlineJournalInfo><Country>United States</Country><MedlineTA>Opt Express</MedlineTA><NlmUniqueID>101137103</NlmUniqueID><ISSNLinking>1094-4087</ISSNLinking></MedlineJournalInfo><ChemicalList><Chemical><RegistryNumber>0</RegistryNumber><NameOfSubstance>gallium nitride</NameOfSubstance></Chemical><Chemical><RegistryNumber>0</RegistryNumber><NameOfSubstance>indium nitride</NameOfSubstance></Chemical><Chemical><RegistryNumber>045A6V3VFX</RegistryNumber><NameOfSubstance>Indium</NameOfSubstance></Chemical><Chemical><RegistryNumber>CH46OC8YV4</RegistryNumber><NameOfSubstance>Gallium</NameOfSubstance></Chemical></ChemicalList><CitationSubset>IM</CitationSubset><MeshHeadingList><MeshHeading><DescriptorName MajorTopicYN="N">Computer Simulation</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Computer-Aided Design</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Equipment Design</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Equipment Failure Analysis</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Gallium</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Indium</DescriptorName><QualifierName MajorTopicYN="Y">chemistry</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="N">Lighting</DescriptorName><QualifierName MajorTopicYN="Y">instrumentation</QualifierName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="Y">Models, Chemical</DescriptorName></MeshHeading><MeshHeading><DescriptorName MajorTopicYN="Y">Semiconductors</DescriptorName></MeshHeading></MeshHeadingList></MedlineCitation><PubmedData><History><PubMedPubDate PubStatus="entrez"><Year>2010</Year><Month>1</Month><Day>7</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="pubmed"><Year>2010</Year><Month>1</Month><Day>7</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate><PubMedPubDate PubStatus="medline"><Year>2010</Year><Month>3</Month><Day>18</Day><Hour>6</Hour><Minute>0</Minute></PubMedPubDate></History><PublicationStatus>ppublish</PublicationStatus><ArticleIdList><ArticleId IdType="pii">190649</ArticleId><ArticleId IdType="pubmed">20052154</ArticleId></ArticleIdList></PubmedData></pubmed></record>Pour manipuler ce document sous Unix (Dilib)
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